Product Description
A spectacular speed every day
Execute your tasks faster. The 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds of up to 7,250 MB/s and 6,300 MB/s. Large files and instant transfers.
Stay cool even with blazing performance
Consistent power, more efficient performance. Thanks to the nickel controller, the 990 EVO Plus has a performance per watt that is 73% higher than the previous model.
Max storage. Max speed.
Harness the full power of your SSD with Intelligent TurboWrite 2.0 technology. Process massive data and heavy graphics faster with an extended TurboWrite, now available up to 4 TB.
Samsung Magician Software
Make your SSD run like a dream. The optimization tools in Samsung Magician software ensure the best performance from your SSD. It’s the safest and easiest way to migrate all your data for an upgrade to a Samsung SSD. Protect your valuable data, monitor the health status of the SSD, and get the latest updates.
Bringing innovations to life
For decades, Samsung's NAND flash memory has powered revolutionary technologies that have changed our daily lives. This NAND flash technology also equips consumer SSDs, paving the way for the next big wave of innovation.
Performance
Sequential read speed increased to 7,250 MB/s, which is 45% more than the previous model.
Energy efficiency
Performance per watt is improved by 73% compared to the previous model, for more MB/s per watt, while maintaining performance and thermal control.
Versatility
Up to 4 TB of extended capacity and Intelligent TurboWrite 2.0.
Product Features
- Samsung MZ-V9S1T0.
- Solid State Drive (SSD) Capacity: 1 TB, SSD Form Factor: M.2, Read Speed: 7150 MB/s, Write Speed: 6300 MB/s, component for: PC
Technical specifications
Poids et dimensions
Puissance
Tension de fonctionnement
3,3 V
Consommation électrique (idle)
0,06 W
Consommation électrique (Lecture)
4,3 W
Consommation électrique (Ecriture)
4,2 W
Consommation électrique DevSlp (mode veille)
5 mW
Consommation électrique moyenne (lecture)
4,3 W
Consommation électrique moyenne (écriture)
4,2 W
Conditions environnementales
Température d'opération
0 - 70 °C
Choc durant le fonctionnement
1500 G
Caractéristiques
Algorithme de sécurité soutenu
256-bit AES
Temps moyen entre pannes
1500000 h
Type de mémoire
V-NAND TLC
Vitesse de lecture
7150 Mo/s
Vitesse d'écriture
6300 Mo/s
Capacité du Solid State Drive (SSD)
1 To
Écriture aléatoire (4KB)
1350000 IOPS
Lecture aléatoire (4KB)
850000 IOPS
Le chiffrement matériel
Oui
Prise en charge de DevSlp (veille du dispositif)
Oui
Taille du SSD M.2
2280 (22 x 80 mm)